Abstract: The split-gate trench (SGT) MOSFET is a vertical power device having a separate field plate (FP) inside a deep trench. This design increases the breakdown voltage (BV) via the reduced ...
Abstract: Silicon carbide (SiC) power MOSFETs with trench-gate structure have been irradiated with heavy-ion broad beam and microbeam. Microdose effects resulting in higher subthreshold drain leakage ...
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How real-life horror fights are simulated in Roblox
GamingWithKev breaks down the Cartoon Cat vs Siren Head Roblox myth showdown and winner. Oscar winner Helen Mirren admits ...
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