Semiconductor Engineering

Doping-Dependent Charge Trapping in WS2 FETs (KU Leuven, imec, TU Wien)

A new technical paper titled “Impact of doping and channel inhomogeneities on the stability of industrially fabricated WS2 ...
Semiconductor Engineering

SiGeSn SBFETs at Cryogenic Temperatures (Tu Wien et al)

A new technical paper titled “A Cryogenic Ultra-Thin Body SiGeSn Transistor” was published by researchers at TU Wien, ...
Modern Engineering Marvels on MSN

Bacteria-sized robots with solar brains run for months unattended

What’s smaller than a grain of salt, smarter than most lab equipment, and can run for months without a recharge? According to ...
CNBCTV18

China mandates 50% domestic equipment rule for chipmakers, says report

China mandates chipmakers use at least 50% domestic equipment for new capacity, boosting Naura, AMEC, and SMIC in its semiconductor supply chain push.
IEEE

A 21-Transistor Single-Phase-Clocked Flip Flop with Low Leakage Current for Near-threshold Voltage Operation

Abstract: A 21-transistor single-phase-clocked flip-flop with low leakage power is presented in this brief. The architecture of the proposed flip-flop is based on topological modification and device ...
IEEE

Enhanced Performance and Stability of Atomic Layer Deposited In₂O₃ Transistors With Multi-Function Cation-Doped ZnSnO Layers

Abstract: Ultrathin films of In2O3 have demonstrated high transistor mobility yet exhibit vulnerability to stability degradation under bias stress. Here, we engineered ultrathin In2O3 films via atomic ...