Abstract: This article presents observations of silicon carbide (SiC) damage related to single-event gate oxide damage in SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) subjected to ...
Imad is a senior reporter covering Google and internet culture. Hailing from Texas, Imad started his journalism career in 2013 and has amassed bylines with The New York Times, The Washington Post, ...
Abstract: In this study, the robustness of insulated gate bipolar transistors (IGBTs) under extreme high-gate voltage stress (both positive and negative) is comprehensively investigated. The results ...
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