Abstract: The modeling and parameter extraction of the anti-parallel GaAs Schottky diode for terahertz monolithic-integrated circuit (TMIC) design is proposed in this article. The main advantage is ...
Abstract: Ga2O3 Schottky barrier diodes (SBDs) featuring a field plate (FP) and a composite SiO2/SiNx dielectric layer beneath the FP were fabricated, achieving a breakdown voltage (BV) of 2.4 kV at ...
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