Abstract: We have studied the temperature dependence of the forward dark current in a Si PIN photodiode. The temperature variations of the ideality factor and saturation current suggest that, ...
Abstract: The properties of ultra-thin, pin photodiode arrays designed for CT and other scintillator-based applications are discussed. The photodiode arrays were built on 75-μm thick single Si dies.
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback