Abstract: The split-gate trench (SGT) MOSFET is a vertical power device having a separate field plate (FP) inside a deep trench. This design increases the breakdown voltage (BV) via the reduced ...
Folks, the cheese has officially slid off our president’s cracker. In what was technically a prime-time address to the nation, President Donald Trump spent about 20 minutes on the night of Dec. 17 ...
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