Abstract: We demonstrated 3D vertical Gate-All-Around (GAA) vertical-channel FeFET using ferroelectric (FE) Zr-doped HfO 2 (HZO) and indium-gallium oxide (IGO) channel. Subthreshold swing of 90 mV/dec ...
Abstract: The quality of 3D generative modeling has been notably improved by the adoption of 2D diffusion models. Despite this progress, the cumbersome optimization process per se presents a critical ...
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